AT-42010 up to 6 ghz medium power silicon bipolar transistor data sheet features ? high output power: 21.0 dbm typical p 1 db at 2.0 ghz 20.5 dbm typical p 1 db at 4.0 ghz ? high gain at 1 db compression: 14.0 db typical g 1 db at 2.0 ghz 9.5 db typical g 1 db at 4.0 ghz ? low noise figure: 1.9 db typical nf o at 2.0 ghz ? high gain-bandwidth product: 8.0 ghz typical f t ? hermetic gold-ceramic microstrip package 100 mil package description avagos AT-42010 is a general purpose npn bipolar tran - sistor that ofers excellent high frequency performance. the AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. the 4 micron emitter-to-emitter pitch enables this transistor to be used in many diferent functions. the 20 emitter fnger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. this device is designed for use in low noise, wideband amplifer, mixer and oscillator applications in the vhf, uhf, and microwave frequencies. an optimum noise match near 50 up to 1 ghz, makes this device easy to use as a low noise amplifer. the AT-42010 bipolar transistor is fabricated using avagos 10 ghz ft self-aligned-transistor (sat) process. the die is nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. ifd-53010 pkg
AT-42010 absolute maximum ratings [1] absolute symbol parameter units maximum v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 0 v ceo collector-emitter voltage v 1 i c collector current ma 80 p t power dissipation [,3] mw 600 t j junction temperature c 00 t stg storage temperature c -65 to 00 thermal resistance [2,4] : jc = 150c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. tcase = 25c. 3. derate at 6.7 mw/c for tc > 110c. 4. the small spot size of this technique results in a higher, though more accurate determi - nation of jc than do alternate methods. see measurements section thermal re - sistance for more information. electrical specifcations, t a = 25c symbol parameters and test conditions [1] units min. typ. max. |s 1e | insertion power gain; v ce = 8 v, i c = 35 ma f = .0 ghz db 10.5 11.5 f = 4.0 ghz 5.5 p 1 db power output @ 1 db gain compression f = .0 ghz dbm 1.0 v ce = 8 v, i c = 35 ma f= 4.0 ghz 0.5 g 1 db 1 db compressed gain; v ce = 8 v, i c = 35 ma f = .0 ghz db 14.0 f = 4.0 ghz 9.5 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = .0 ghz db 1.9 f = 4.0 ghz 3.0 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = .0 ghz db 13.5 f = 4.0 ghz 10.0 f t gain bandwidth product: v ce = 8 v, i c = 35 ma ghz 8.0 h fe forward current transfer ratio; v ce = 8 v, i c = 35 ma 30 150 70 i cbo collector cutof current; v cb = 8 v a 0. i ebo emitter cutof current; v eb = 1 v a .0 c cb collector base capacitance [1] : v cb = 8 v, f = 1 mhz pf 0.8 notes: 1. for this test, the emitter is grounded.
3 AT-42010 typical performance, t a = 25c frequency (ghz) figure 4. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 35 ma. gain (db) 0.1 0.5 0.3 1.0 3.0 6.0 i c (ma) figure 2. output power and 1 db compressed gain vs. collector current and frequency. v ce = 8 v. 24 20 16 12 8 4 g 1 db (db ) p 1 db (dbm ) 0 1 0 2 0 3 0 4 0 5 0 p 1d b g 1db 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 ms g mag |s 21e | 2 i c (ma) figure 1. insertion power gain vs. collector current and frequency. v ce = 8 v. 20 16 12 8 4 0 |s 21e | 2 gain (db) 0 1 0 2 0 3 0 4 0 5 0 1.0 ghz 2.0 ghz 4.0 ghz i c (ma) figure 3. output power and 1 db compressed gain vs. collector current and voltage. f = 2.0 ghz. 10 v 4 v 6 v 4 v 10 v 6 v 24 20 16 12 16 14 12 10 g 1 db (db) p 1 db (dbm ) 0 1 0 2 0 3 0 4 0 5 0 p 1db g 1db frequency (ghz) figure 5. noise figure and associated gain vs. frequency. v ce = 8 v, i c = 10 ma. gain (db) 24 21 18 15 12 9 6 3 0 4 3 2 1 0 nf o (db) 0.5 2.0 1.0 3.0 4.0 5.0 g a nf o
4 AT-42010 typical scattering parameters, common emitter, z o = 50 , t a = 5c, v ce = 8 v, i c = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .74 -47 8.5 6.65 153 -36.4 .015 7 .91 -18 0.5 .65 -136 1.4 11.71 103 -9.4 .034 38 .51 -39 1.0 .63 -168 15.9 6.4 8 -7. .044 36 .40 -4 1.5 .63 174 1.6 4.6 69 -6.0 .050 4 .38 -45 .0 .63 161 10.1 3.3 57 -4.6 .059 43 .38 -49 .5 .64 154 8.4 .64 51 -3.0 .070 5 .38 -51 3.0 .65 145 6.9 . 41 -.0 .080 54 .37 -56 3.5 .66 136 5.8 1.94 31 -1.0 .090 51 .38 -65 4.0 .66 16 4.7 1.7 1 -19.7 .104 50 .39 -74 4.5 .66 115 3.8 1.55 11 -18.0 .16 45 .40 -8 5.0 .66 103 3.0 1.41 1 -17.3 .136 41 .40 -89 5.5 .68 90 .1 1.8 -9 -16.1 .156 36 .40 -98 6.0 .7 81 1.3 1.16 -19 -15.4 .170 31 .37 -110 AT-42010 typical scattering parameters, common emitter, z o = 50 , t a = 5c, v ce = 8 v, i c = 35 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .54 -90 33.3 45.97 138 -39. .011 54 .76 -9 0.5 .6 -163 .8 13.83 94 -33. .0 5 .34 -40 1.0 .6 177 17.0 7.10 78 -8.8 .036 59 .30 -40 1.5 .6 166 13.6 4.8 67 -6. .049 61 .9 -4 .0 .6 155 11.3 3.65 56 -3.8 .065 57 .9 -47 .5 .63 150 9.5 .99 51 -1.8 .081 6 .9 -50 3.0 .64 14 8.0 .5 4 -1.0 .090 63 .30 -57 3.5 .65 133 6.8 .19 3 -19.7 .103 59 .30 -67 4.0 .65 14 5.7 1.93 -18.4 .10 54 .31 -76 4.5 .65 113 4.7 1.7 13 -17. .138 49 .33 -85 5.0 .66 10 3.9 1.56 3 -16.6 .148 45 .34 -9 5.5 .69 91 3.0 1.41 -6 -15.6 .166 39 .33 -100 6.0 .73 83 .1 1.7 -16 -14.9 .180 3 .30 -110 AT-42010 noise parameters: v ce = 8 v, i c = 10 ma freq. nf o opt ghz db mag ang r n /50 0.1 1.0 .04 15 0.13 0.5 1.1 .05 76 0.1 1.0 1.5 .10 13 0.1 .0 1.9 .3 -177 0.11 4.0 3.0 .45 -15 0.6
100 mil package dimensions for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countries. data subject to change. copyright ? 008 avago technologies limited. all rights reserved. obsoletes av01-00en av0 -1 17en april 9, 008 ordering information part number no. of devices at-4 010 100 1 3 4 2 emitter emitter collector base .020 .508 .100 2.54 .495 .030 12.57 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .040 1.02 .030 .76 .004 .002 .10 .05
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